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Two-dimensional to bulk crossover of the WSe2 electronic band structure
| Citace: |
RAPHAËL, S.; JAMET, M.; VERGNAUD, C.; PULKKINEN, AIO.; BERTRAN, F.; BIGI, CH.; MINÁR, J.; OUERGHI, A.; JAOUEN, T.; RAULT, J.; LE F?VRE, P. Two-dimensional to bulk crossover of the WSe2 electronic band structure. Electronic Structure, 2025, roč. 7, č. 2, s. nestránkováno. ISSN 2516-1075.
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| Druh: | ČLÁNEK |
| Jazyk publikace: | eng |
| Anglický název: | Two-dimensional to bulk crossover of the WSe2 electronic band structure |
| Rok vydání: | 2025 |
| Autoři: | Salazar Raphaël , Matthieu Jamet , Céline Vergnaud , Aki Ismo Olavi Pulkkinen D.Sc. , François Bertran , Chiara Bigi , prof. Dr. Jan Minár , Abdelkarim Ouerghi , Thomas Jaouen , Julien Rault , Patrick Le Fèvre |
| Abstrakt EN: | Transition metal dichalcogenides (TMDs) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit.Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of large area epitaxial WSe2 thin films. Increasing number of discrete electronic states appears in given kz-ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green?s function calculation. |
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