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Electronic structure of Bi nanolines on InAs(100)
| Citace: |
NAFDAY, D. RICHTER, CH. HECKMANN, O. WANG, W. MARIOT, J. DJUKIC, U. VOBORNIK, I. LEFEVRE, P. TALEB-IBRAHIMI, A. BERTRAN, F. RAULT, J. NICOLAI, LCH. ONG, CHS. THUNSTRÖM, P. HRICOVINI, K. MINÁR, J. DI MARCO, I. Electronic structure of Bi nanolines on InAs(100). APPLIED SURFACE SCIENCE, 2023, roč. 611, č. FEB 15 2023, s. nestránkováno. ISSN: 0169-4332
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| Druh: | ČLÁNEK |
| Jazyk publikace: | eng |
| Anglický název: | Electronic structure of Bi nanolines on InAs(100) |
| Rok vydání: | 2023 |
| Autoři: | Dhani Nafday , Christine Richter , Olivier Heckmann , Weimin Wang , Jean-Michel Mariot , Uros Djukic , Ivana Vobornik , Patrick Lefevre , Amina Taleb-Ibrahimi , Franco̧is Bertran , Julien Rault , Laurent Christophe Nicolai Doktor , Chin Shen Ong , Patrik Thunström , Karol Hricovini , prof. Dr. Jan Minár , Igor Di Marco |
| Abstrakt EN: | Self-assembled nanolines are attractive to build the technological devices of next generation, but characterizing their electronic properties is often difficult to achieve. In this work we employ angle-resolved photoemission spectroscopy and density functional theory to clarify the electronic structure exhibited by self-assembled Bi nanolines grown on the InAs(100) surface. A surface resonance associated to the reconstructed ?(4 × 2) surface is visible in the photoemission spectra before and after the formation of the Bi nanolines. This demonstrates that Bi deposition does not necessarily drive a transition to an unreconstructed surface in the substrate, which is contrary to what was reported in previous studies. In addition, experiment and theory show the presence of a flat band located in the band gap of InAs, just above the valence band maximum. This flat band is associated to the Bi nanolines and possesses a strong orbital character, consistent with its unidimensional nature. These spectral features suggest that Bi nanolines on InAs(100) may have a strongly polarized conductivity, which makes them suitable to be exploited as nanowires in nanotechnology. The coexistence with an accumulation layer suggests an even farther functionalization. |
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