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Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors
| Citace: |
KOBAYASHI, M. ANH, LD. MINÁR, J. KHAN, W. BOREK, S. HAI, PN. HARADA, Y. SCHMITT, T. OSHIMA, M. FUJIMORI, A. TANAKA, M. STROCOV, VN. Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors. Physical Review B, 2021, roč. 103, č. 11, s. nestránkováno. ISSN: 2469-9950
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| Druh: | ČLÁNEK |
| Jazyk publikace: | eng |
| Anglický název: | Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors |
| Rok vydání: | 2021 |
| Autoři: | Masaki Kobayashi , Le Duc Anh , prof. Dr. Jan Minár , Walayat Khan , Stephan Borek , Pham Nam Hai , Yoshihisa Harada , Thorsten Schmitt , Masaharu Oshima , Atsushi Fujimori , Masaaki Tanaka , Vladimir N. Strocov |
| Abstrakt EN: | Fully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream p-type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in n-type FMSs is theoretically nontrivial. Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) is a powerful approach to examine the mechanism of carrier-induced ferromagnetism in FMSs. Here our SX-ARPES study on the prototypical n-type FMS (In,Fe)As reveals the entire band structure, including the Fe-3d impurity bands (IBs) and the host InAs ones, and provides direct evidence for electron occupation of the InAs-derived conduction band (CB). A minority-spin Fe-3d IB is found to be located just below the conduction-band minimum (CBM). The IB is formed by the hybridization of the unoccupied Fe 3d states with the occupied CBM of InAs in a spin-dependent way, resulting in the large spin polarization of CB. The band structure with the IB is varied with band filling, which cannot be explained by the rigid-band picture, suggesting a unified picture for realization of carrier-induced ferromagnetism in FMS materials. |
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